Thin-film transparent conductive structure and devices made therewith
US9324966B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24331
Abstract
A transparent conductive structure useful in the fabrication of electrical, electronic, and optoelectronic devices is provided by a mesh-like metallic structure in the form of a thin film having a plurality of apertures, e.g. one having an average size of 250 nm to 425 nm as measured in the largest dimension and an average nearest-neighbor spacing of 300 nm to 450 nm. In another aspect, the metallic thin film has plural sublayers of different metals, and may have apertures up to 2 μm in size and an average nearest-neighbor spacing of up to 2.5 μm. The metallic thin film may be 20 to 200 nm thick, and may be formed on a flexible or rigid substrate or on a device itself. The structure exhibits a transparency enhanced over a value determined simply by the fraction of the area of the metallic film occupied by the apertures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.