Photonic devices and methods of using and making photonic devices
US9325140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/2308
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.