Integrated power device with a metal oxynitride active channel for power switching and microwave amplification
US9325279B1 · kind B1 · utility
0Cited by
1References
22Claims
0Family size
Inventors
Key dates
| Filing date | Oct 6, 2014 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Oct 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.