Composition for forming resist underlayer
US9328198B2 · kind B2 · utility
0Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Oct 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a dendrimer compound capable of improving critical dimension uniformity and DOF (depth of focus) margin, and also provides a composition capable of forming an underlayer film. The dendrimer compound comprises a branched chain having a central aromatic skeleton and amide or ester bond, and is contained in the composition for forming an underlayer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.