Rare-earth oxyorthosilicates with improved growth stability and scintillation characteristics
US9328288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Nov 10, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for making a rare-earth oxyorthosilicate scintillator single crystal includes growing a single crystal from a melt of compounds including a rare-earth element (such as Lu), silicon and oxygen, a compound including a rare-earth activator (such as Ce), and a compound of a Group-7 element (such as Mn). The method further includes selecting an scintillation performance parameter (such as decay), and based on the scintillation performance parameter to be achieved, doping activator and Group-7 element at predetermined levels, or relative levels between the two, so as to achieve stable growth of the single-crystalline scintillator material from the melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.