Method for preparing graphene nanoribbon on insulating substrate

US9328413B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Shujie Tang · Shanghai, CN
• Guqiao Ding · Shanghai, CN
• Xiaoming Xie · Jing County, CN
• Ji Chen · Sugar Land, US
• Chen-Hao Wang · Taipei, TW
• Mianheng Jiang · Shanghai, CN

Key dates

• Filing date: Aug 5, 2011
• Grant date: May 3, 2016
• Expiry date: Oct 16, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/2918
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.