Method of stack patterning using a ion etching
US9330885B2 · kind B2 · utility
3Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2011 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.