Material quality, suspended material structures on lattice-mismatched substrates
US9330907B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Oct 10, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Oct 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.