Semiconductor device having contact plug and method of forming the same
US9331080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2015 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | May 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an N-type fin and a P-type fin on a substrate, a first gate electrode configured to cross the N-type fin and cover a side surface of the N-type fin, a second gate electrode configured to cross the P-type fin and cover a side surface of the P-type fin, a first source/drain on the N-type fin adjacent to the first gate electrode, a second source/drain on the P-type fin adjacent to the second gate electrode, a buffer layer on a surface of the second source/drain and including a material different from the second source/drain, an interlayer insulating layer on the buffer layer and the first source/drain, a first plug connected to the first source/drain and passing through the interlayer insulating layer, and a second plug connected to the second source/drain and passing through the interlayer insulating layer and the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.