Non-volatile memory with improved sensing window
US9331085B2 · kind B2 · utility
3Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2015 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Apr 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include: a substrate. First and second gate electrode patterns are disposed on first and second fin type active patterns. The first and second fin type active patterns include a first channel region disposed between a first impurity region and a second impurity region. The second gate electrode pattern crosses a first gate-separating region included in the second fin type active region. The first gate-separating region includes a trench and an embedded insulator filling at least a portion of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.