Pixel structure and fabrication method thereof

US9331106B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Wei-Hao Tseng · 埔鹽鄉, TW
• Fan-Wei Chang · Baoshan, TW
• Shou-Wei Fang · Taipei, TW
• Hong Chen · San Jose, US
• Jen-Yu Lee · Daxi District, TW
• Tsung-Hsiang Shih · Sanxing, TW
• Hung-Che Ting · Taipei, TW

Key dates

• Filing date: Mar 20, 2014
• Grant date: May 3, 2016
• Expiry date: Mar 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6729

Abstract

A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.