Method of manufacturing photoelectric conversion apparatus including pixel well contact
US9331121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Nov 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a photoelectric conversion apparatus which includes a pixel circuit section having a well where a photoelectric conversion element and an amplification element configured to generate a signal based on an amount of charge generated in the photoelectric conversion element are arranged, and a peripheral circuit section having a MOS transistor. The method includes forming a dielectric film for covering the photoelectric conversion element, the amplification element, and a gate electrode of the MOS transistor and forming, by etching the dielectric film, a side spacer by remaining a portion of the dielectric film on a side surface of the gate electrode while protecting by a resist, wherein an opening is formed in the dielectric film of the pixel circuit section with the etching, and a contact for defining a potential of the well is formed through the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.