High electron mobility transistor

US9331154B2 · kind B2 · utility

Assignees

• Epistar Corporation · TW
• Huga Optotech Inc. · TW

Inventors

• Hsien-Chin Chiu · Hsinchu, TW
• Chien-Kai Tung · Hsinchu, TW
• Heng-Kuang Lin · Kaohsiung, TW
• Chih-Wei Yang · New Taipei, TW
• Hsiang-Chun Wang · Taichung, TW

Key dates

• Filing date: Jul 10, 2014
• Grant date: May 3, 2016
• Expiry date: Jul 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.