Semiconductor device and method for manufacturing the same
US9331156B2 · kind B2 · utility
15Cited by
37References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 11, 2012 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | May 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10−3 Pa, preferably lower than or equal to 10−4 Pa, more preferably lower than or equal to 10−5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm3 and lower than 6.375 g/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.