Semiconductor device with multilayer contact and method of manufacturing the same

US9331186B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Soenke Habenicht · Eindhoven, NL
• Detief Oelgeschlaeger · Hamburg, DE
• Olrik Schumacher · Hamburg, DE
• Stefan Berglund · Eindhoven, NL

Key dates

• Filing date: Dec 21, 2009
• Grant date: May 3, 2016
• Expiry date: Apr 22, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.