Directly bonded, lattice-mismatched semiconductor device
US9331227B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 10, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Jul 19, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a first subassembly and a second subassembly. The first subassembly may include a first bonding layer. The second subassembly may include a second substrate and a second bonding layer directly bonded to the first bonding layer. The first bonding layer and the second bonding layer may be lattice-mismatched to one another. At least one of the following may be selected: the first bonding layer is lattice-mismatched to the first substrate, and the second bonding layer is lattice-mismatched to the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.