Semiconductor structure with inhomogeneous regions

US9331244B2 · kind B2 · utility

Assignee

• Sensor Electronic Technology, Inc.

Inventors

• Maxim S. Shatalov · Columbia, US
• Alexander Dobrinsky · Loudonville, US
• Alexander Lunev · Columbia, US
• Rakesh Jain · Columbia, US
• Jinwei Yang · Columbia, US
• Michael Shur · Latham, US
• Remigijus Gaska · Columbia, US

Key dates

• Filing date: Feb 25, 2014
• Grant date: May 3, 2016
• Expiry date: Jul 27, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0234
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.