Microelectromechanical resonators having degenerately-doped and/or eutectic alloy resonator bodies therein
US9331264B1 · kind B1 · utility
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12Claims
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Key dates
| Filing date | Dec 12, 2012 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Jun 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2007/006
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A microelectromechanical resonator includes a resonator body having a semiconductor region therein that may be degenerately doped with boron. This high level of doping facilitates the formation of a eutectic alloy within the resonator body in response to resistive heating. The formation of a lattice-strained eutectic alloy within the resonator body supports reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.