Memristive element and electronic memory based on such elements

US9331274B2 · kind B2 · utility

Assignees

• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• UNIVERSITÉ PARIS CITÉ · FR

Inventors

• Alexandre Moradpour · Paris, FR
• Olivier Schneegans · Antony, FR
• Alexandre Revcolevschi · Boulogne, FR
• Sylvain Franger · Gif-sur-Yvette, FR
• Raphael Salot · Le Pont-de-Claix, FR

Key dates

• Filing date: Dec 14, 2011
• Grant date: May 3, 2016
• Expiry date: Jun 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

The invention relates to a memristive element (M) formed by: a first electrode (10); a second electrode (30); and an active region (20) making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements.