Non-volatile memory device and method of manufacturing the same
US9331291B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Sep 16, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes a gate electrode, a data storage layer provided on the gate electrode, and a source electrode and a drain electrode provided on the data storage layer and spaced apart from each other. The data storage layer comprises three layers that form hetero-interfaces and have different permittivities from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.