Vertical electro-optical component and method of fabricating the same
US9331294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.