Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder
US9334559B2 · kind B2 · utility
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2References
18Claims
0Family size
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Key dates
| Filing date | Jun 27, 2011 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 18, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/77
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.