Method of manufacturing a liquid crystal display device with aluminum complex oxide layer
US9335601B2 · kind B2 · utility
1Cited by
8References
11Claims
0Family size
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Key dates
| Filing date | Jul 17, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Nov 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.