Methods for resistive switching of memristors
US9336870B1 · kind B1 · utility
16Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.