Patent · US Active

Reading and writing to NAND flash memories using charge constrained codes

US9336885B1 · kind B1 · utility

0Cited by
1References
20Claims
0Family size

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Inventors

Key dates

Filing dateMay 23, 2013
Grant dateMay 10, 2016
Priority date
Expiry dateJan 25, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/0411
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.