Methods for depositing films with organoaminodisilane precursors
US9337018B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jan 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below:wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.