Semiconductor device and method for fabricating the same
US9337057B2 · kind B2 · utility
412Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.