Method for manufacturing semiconductor device including doping epitaxial source drain extension regions
US9337102B2 · kind B2 · utility
2Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises, including forming a plurality of fins on a substrate, forming, a dummy gate stack on the fins forming a gate spacer on opposite sides of the dummy gate stack, forming source/drain trenches by etching the fins with the gate spacer and the dummy gate stack as a mask, forming source/drain extension regions on the bottom and sides of the trenches by performing lightly-doping ion implantation; and by performing epitaxial growth in and/or on the source/drain trenches, removing the dummy gate stack to form a gate trench; and forming a gate stack in the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.