Method of integration of wafer level heat spreaders and backside interconnects on microelectronics wafers

US9337124B1 · kind B1 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Florian G. Herrault · Malibu, US
• Alexandros Margomenos · Pasadena, US
• Miroslav Micovic · Thousand Oaks, US
• Melanie S. Yajima · Los Angeles, US
• Eric M. Prophet · Lompoc, US

Key dates

• Filing date: Nov 4, 2014
• Grant date: May 10, 2016
• Expiry date: Nov 4, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/2064
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a wafer level heat spreader includes providing a mesh wafer, the mesh wafer having a plurality of openings and mesh regions between the openings, bonding the mesh wafer to a backside of an integrated circuit (IC) wafer, the IC wafer comprising a plurality of circuits; and electroplating a heat sink material through the plurality of openings and onto to the backside of the IC wafer.