Semiconductor device and method of fabricating the same
US9337199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Oct 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device may include a substrate having a first region and a second region on a surface thereof, and a first semiconductor fin on the first region of the substrate with the first semiconductor fin including a first trench therethrough. A first gate electrode may be provided in the first trench, and first and second source/drain regions may be provided in the first semiconductor fin, with the first gate electrode between the first and second source/drain regions. A second semiconductor fin may be provided on the second region of the substrate with the second semiconductor fin including a second trench therethrough, a second gate electrode may be provided in the second trench, and third and fourth source/drain regions may be provided in the second semiconductor fin with the second gate electrode being between the third and fourth source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.