Graphene-based semiconductor device
US9337273B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
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Key dates
| Filing date | Mar 29, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 29, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.