Silicon carbide semiconductor device having junction barrier Schottky diode
US9337276B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 12, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Sep 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.