Semiconductor devices and methods of manufacturing the same
US9337295B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate electrode on the gate dielectric pattern opposite the substrate. The gate electrode includes a first conductive pattern disposed on the gate dielectric pattern and including aluminum, and a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern. The second conductive pattern has an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern. The second conductive pattern may be thicker than the first conductive pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.