Voltage nonlinear resistor and multilayer varistor using same
US9337355B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | May 23, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | May 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/911
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A voltage nonlinear resistor includes a plurality of N-type ZnO crystal grains, a grain boundary layer, and an oxide grain as a P-type semiconductor. The grain boundary layer is formed between the ZnO crystal grains, and contains at least one kind of oxide of alkaline-earth metal. The oxide grain is disposed between the ZnO crystal grains via the grain boundary layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.