Method and apparatus providing multi-step deposition of thin film layer
US9337376B2 · kind B2 · utility
0Cited by
4References
15Claims
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Key dates
| Filing date | Nov 24, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Nov 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.