Light emitting device
US9337383B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 24, 2012 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.