Semiconductor light emitting element and method for manufacturing the same
US9337385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jul 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
A semiconductor light emitting element includes a substrate and a stacked body. The stacked body is aligned with the substrate. The stacked body includes first and second semiconductor layers, a light emitting layer, and first and second electrodes. The first semiconductor layer has a first face including first and second portions. The first portion is provided with a plurality of convex portions. The second portion is aligned with the first portion. The second semiconductor layer is provided facing the second portion. The light emitting layer is provided between the second portion and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the light emitting layer. An interval of each of the convex portions is no less than 0.5 times and no more than 4 times a wavelength of a light emitted from the light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.