Method for producing a semiconductor layer sequence, radiation-emitting semiconductor chip and optoelectronic component

US9337388B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Joachim Hertkorn · Neukirchen, DE
• Tetsuya Taki · Miyoshi, JP
• Jürgen Off · Regensburg, DE

Key dates

• Filing date: Sep 30, 2011
• Grant date: May 10, 2016
• Expiry date: Apr 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/817

Abstract

A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.