Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
US9337391B2 · kind B2 · utility
10Cited by
46References
14Claims
0Family size
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Key dates
| Filing date | Mar 18, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 18, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.