GaN-based light emitting diode with current spreading structure

US9337406B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• LINGFENG YIN · Xiamen, CN
• Suhui Lin · Xiamen, CN
• Jiansen ZHENG · Xiamen, CN
• CHUANGUI LIU · Xiamen, CN
• YIDE OU · Xiamen, CN
• Gong Chen · Xiamen, CN

Key dates

• Filing date: Mar 7, 2015
• Grant date: May 10, 2016
• Expiry date: Mar 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364

Abstract

A GaN-based LED with a current spreading structure, the LED including a substrate, a light-emitting epitaxial layer over the substrate, and a current spreading structure over the light-emitting epitaxial layer. The current spreading structure includes a transparent electrode spreading bar, and a metal electrode spreading bar attached to the side wall of the transparent electrode spreading bar. The current spreading structure can improve the current spreading effect, reducing or eliminating of electrode shading, improving luminous efficiency of the LED, and avoid or reduce high voltage (Vf).