Semiconductor fabrication process
US9340880B2 · kind B2 · utility
13Cited by
15References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09D7/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.