Layered structure for use with high power light emitting diode systems
US9341355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A layered structure for use with a high power light emitting diode system comprises an electrically insulating intermediate layer interconnecting a top layer and a bottom layer. The top layer, the intermediate layer, and the bottom layer form an at least semi-flexible elongate member having a longitudinal axis and a plurality of positions spaced along the longitudinal axis. The at least semi-flexible elongate member is bendable laterally proximate the plurality of positions spaced along the longitudinal axis to a radius of at least 6 inches, twistable relative to its longitudinal axis up to 10 degrees per inch, and bendable to conform to localized heat sink surface flatness variations having a radius of at least 1 inch. The top layer is pre-populated with electrical components for high wattage, the electrical components including at least one high wattage light emitting diode at least 1.0 Watt per 0.8 inch squared.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.