Metal-insulator-metal capacitor and method for manufacturing thereof

US9343298B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Mihaela Ioana Popovici · Haasrode, BE
• Johan Swerts · Kessel-Lo, BE
• Malgorzata Pawlak · Leuven, BE
• Kazuyuki Tomida · Yokohama, JP
• Min Soo Kim · Seoul, KR
• Jorge A. Kittl · Round Rock, US
• Sven Van Elshocht · Heverlee, BE

Key dates

• Filing date: Sep 26, 2011
• Grant date: May 17, 2016
• Expiry date: Apr 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/684
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiO2 layer being present in the sub-stack.