High temperature intermittent ion implantation
US9343312B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jul 25, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jul 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.