Semiconductor device including work function adjusting element, and method of manufacturing the same
US9343373B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 11, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jul 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate; and an N-channel MIS transistor and a P-channel MIS transistor provided on the same substrate; each of the N-channel MIS transistor and the P-channel MIS transistor having a Hf-containing, high-k gate insulating film, and a gate electrode provided over the high-k gate insulating film, the N-channel MIS transistor having a silicon oxide film or a silicon oxynitride film, which contains a first work function adjusting element, provided between the substrate and the high-k gate insulating film, and, the P-channel MIS transistor having a silicon oxide film or a silicon oxynitride film, which contains the first work function adjusting element same as that contained in the N-channel MIS transistor, provided between the high-k gate insulating film and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.