Nonvolatile memory device and method of manufacturing the same
US9343478B2 · kind B2 · utility
3Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.