Semiconductor materials, transistors including the same, and electronic devices including transistors
US9343534B2 · kind B2 · utility
7Cited by
9References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Dec 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.