Photoresist composition, method of forming a pattern and method of manufacturing a thin film transistor substrate
US9343553B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Oct 24, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Oct 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition, a method of forming a pattern, and a method of manufacturing a thin film transistor substrate, the composition including a solvent, a novolak resin, a diazide-based photo-sensitizer, an acryl compound represented by the following Chemical Formula 1:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.