Vertical power component

US9343557B2 · kind B2 · utility

Assignees

• STMicroelectronics (Tours) SAS · FR
• Universite Francois Rabelais · FR

Inventors

• Samuel Menard · Tours, FR
• Gael Gautier · Véretz, FR

Key dates

• Filing date: Feb 7, 2013
• Grant date: May 17, 2016
• Expiry date: Feb 7, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834

Abstract

A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.