Photodetector
US9343601B2 · kind B2 · utility
3Cited by
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8Claims
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Key dates
| Filing date | Jun 27, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350 nm to 1100 nm, and first and second electrodes are formed on the photodetection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.